sot23 p-channel enhancement mode vertical dmos fet issue 3 - january 1996 partmarking detail ? mx absolute maximum ratings. parameter symbol value unit drain-source voltage v ds -45 v continuous drain current at t amb =25c i d -90 ma pulsed drain current i dm -1.6 a gate source voltage v gs 20 v power dissipation at t amb =25c p tot 330 mw operating and storage temperature range t j :t stg -55 to +150 c electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol min. typ. max. unit conditions. drain-source breakdown voltage bv dss -45 -70 v i d =-100 m a, v gs =0v gate-source threshold voltage v gs(th) -1 -3.5 v i d =-1ma, v ds = v gs gate-body leakage i gss -20 na v gs =-15v, v ds =0v zero gate voltage drain current i dss -0.5. m a v ds =-25v, v gs =0v static drain-source on-state resistance (1) r ds(on) 914 w v gs =-10v,i d =-200ma forward transconductance (1)(2) g fs 90 ms v ds =-10v,i d =-200ma input capacitance (2) c iss 25 pf v ds =-10v, v gs =0v, f=1mhz turn-on delay time (2)(3) t d(on) 10 ns v dd ? -25v, i d =-200ma rise time (2)(3) t r 10 ns turn-off delay time (2)(3) t d(off) 10 ns fall time (2)(3) t f 10 ns (1) measured under pulsed conditions. width=300 m s. duty cycle 2% (2) sample test. (3) switching times measured with 50 w source impedance and <5ns rise time on a pulse generator spice parameter data is available upon request for this device bs250f d g s sot23 3 - 55
bs250f 3 - 57 bs250f typical characteristics output characteristics v ds - drain source voltage (volts) i d - d r a i n c u r r e nt (amps ) -0.8 -0.6 -0.4 0 -0.2 -1.0 transfer characteristics normalised r ds(on) and v gs(th) vs temperature junction temperature (c) nor m ali s e d r ds(on) a nd v g s(th) -40 -20 0 20 40 60 80 120 100 140 160 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.6 0.8 dr ai n - s o u rc e r e s i s tanc e r d s(o n ) g ate t h res h o l d v o l tag e v gs ( t h ) i d= 0.37a 0-2 -4 -6 -8 -10 -1.0 -0.8 -0.6 -0.4 0 -0.2 0 -10 -20 -30 -40 -50 saturation characteristics on-resistance vs drain current i d- drain current (ma) -6 0 -2 -4 -8 0-2 -4 -6 -8-10 -10 v ds- drain source voltage (volts) rds(on)-drain source on resistance ( w ) voltage saturation characteristics v gs- gate source voltage (volts) -0.6 0 -0.2 -0.4 -0.8 0-2-4-6-8-10 -1.0 v gs= -20v -16v -6v -7v -8v -5v -4v -16v -9v i d= - 400ma -200ma -100ma v ds=- 10v v gs- gate source voltage (volts) v gs= -10v i d= -1ma v gs= v ds -1.2 -10v -9v -10v -6v 2.6 180 10 1 100 -10 -100 -1000 v gs =-5v v gs= -20v -15v -20v -7v -6v -7v -8v -10v -12v -5v -4.5v -14v v gs = -14v -12v i d - drain curre n t ( amps) v ds - drain source voltage (volts) i d( o n ) - on-sta t e d r ain current (amps ) typical characteristics transconductance v drain current i d - drain current (amps ) g fs -t r an sc o n ducta n c e ( m s) 80 60 40 0 20 100 0 -0.1 -0.2 -0.3 -0.4 -0.5 -0.6 -0.7 -0.8 -0.9 -1.0 -6 -8 -10 -14 -16 -12 -4 -2 0 0.5 1.0 1.5 0 q-gate charge (nc) 120 note:v ds= -10v transconductance v gate-source voltage v gs -gate source voltage (volts) g f s -t ransconductance (ms) 80 60 40 0 20 100 0-1 -2 -3 -4 -5 -6 -7 -8 -9 -10 120 note:v ds= -10v 40 30 20 0 10 50 60 0 -10 -20 -30 -40 -50 -60 -70 v ds -drain source voltage (volts) capacitance v drain-source voltage c-capac ita n c e ( p f ) note:v gs= 0v f=1mhz c iss c oss c rss v gs - gate so ur ce v o l t age (v olts) 1 2 gate charge v gate-source voltage v ds = -20v note:i d=- 0.2a -40v -60v 3 - 56
bs250f 3 - 57 bs250f typical characteristics output characteristics v ds - drain source voltage (volts) i d - d r a i n c u r r e nt (amps ) -0.8 -0.6 -0.4 0 -0.2 -1.0 transfer characteristics normalised r ds(on) and v gs(th) vs temperature junction temperature (c) nor m ali s e d r ds(on) a nd v g s(th) -40 -20 0 20 40 60 80 120 100 140 160 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.6 0.8 dr ai n - s o u rc e r e s i s tanc e r d s(o n ) g ate t h res h o l d v o l tag e v gs ( t h ) i d= 0.37a 0-2 -4 -6 -8 -10 -1.0 -0.8 -0.6 -0.4 0 -0.2 0 -10 -20 -30 -40 -50 saturation characteristics on-resistance vs drain current i d- drain current (ma) -6 0 -2 -4 -8 0-2 -4 -6 -8-10 -10 v ds- drain source voltage (volts) rds(on)-drain source on resistance ( w ) voltage saturation characteristics v gs- gate source voltage (volts) -0.6 0 -0.2 -0.4 -0.8 0-2-4-6-8-10 -1.0 v gs= -20v -16v -6v -7v -8v -5v -4v -16v -9v i d= - 400ma -200ma -100ma v ds=- 10v v gs- gate source voltage (volts) v gs= -10v i d= -1ma v gs= v ds -1.2 -10v -9v -10v -6v 2.6 180 10 1 100 -10 -100 -1000 v gs =-5v v gs= -20v -15v -20v -7v -6v -7v -8v -10v -12v -5v -4.5v -14v v gs = -14v -12v i d - drain curre n t ( amps) v ds - drain source voltage (volts) i d( o n ) - on-sta t e d r ain current (amps ) typical characteristics transconductance v drain current i d - drain current (amps ) g fs -t r an sc o n ducta n c e ( m s) 80 60 40 0 20 100 0 -0.1 -0.2 -0.3 -0.4 -0.5 -0.6 -0.7 -0.8 -0.9 -1.0 -6 -8 -10 -14 -16 -12 -4 -2 0 0.5 1.0 1.5 0 q-gate charge (nc) 120 note:v ds= -10v transconductance v gate-source voltage v gs -gate source voltage (volts) g f s -t ransconductance (ms) 80 60 40 0 20 100 0-1 -2 -3 -4 -5 -6 -7 -8 -9 -10 120 note:v ds= -10v 40 30 20 0 10 50 60 0 -10 -20 -30 -40 -50 -60 -70 v ds -drain source voltage (volts) capacitance v drain-source voltage c-capac ita n c e ( p f ) note:v gs= 0v f=1mhz c iss c oss c rss v gs - gate so ur ce v o l t age (v olts) 1 2 gate charge v gate-source voltage v ds = -20v note:i d=- 0.2a -40v -60v 3 - 56
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